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| Transistor 2SD2416 Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm s Features q q q q 4.50.1 1.60.2 1.50.1 High foward current transfer ratio hFE. 60V zener diode built in between collector and base. Darlington connection. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.60.1 0.4max. 45 1.0-0.2 +0.1 0.40.08 0.50.08 1.50.1 3.00.15 3 2 1 4.0-0.20 0.40.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25C) Ratings +25 60-10 +25 60-10 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Unit V V V A A W C C B 1:Base 2:Collector 3:Emitter marking 5 1.5 1 1 150 -55 ~ +150 1cm2 EIAJ:SC-62 Mini Power Type Package Marking symbol : 1T Internal Connection C Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency (Ta=25C) Symbol ICBO IEBO VCBO VCEO hFE VCE(sat) VBE(sat) fT Conditions VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100A, IE = 0 IC = 1mA, IB = 0 VCE = 10V, IC = IC = 1.0A, IB = 1.0A* 1.0mA* 50 50 6500 min typ max 1 2 85 85 40000 1.8 2.2 150 *2 Unit A mA V V IC = 1.0A, IB = 1.0mA* VCB = 10V, IE = -50mA, f = 200MHz MHz Pulse measurement 2.50.1 +0.25 V V 1 Transistor PC -- Ta 1.4 2SD2416 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 2.4 VCE=10V Ta=25C 2.0 1000 300 100 30 10 3 25C 1 -25C 0.3 0.1 0.01 0.03 Ta=100C VCE(sat) -- IC IC/IB=1000 Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.0 Collector current IC (A) 1.6 IB=100A 90A 80A 70A 60A 50A 40A 0.8 1.2 0.6 0.8 0.4 0.2 0.4 30A 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 1 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 1000 hFE -- IC 106 Cob -- VCB Collector output capacitance Cob (pF) VCE=10V 24 f=1MHz IE=0 Ta=25C Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 300 100 30 10 3 Ta=-25C 1 0.3 0.1 0.01 0.03 100C 25C Forward current transfer ratio hFE 20 105 Ta=100C 25C 104 -25C 16 12 8 103 4 0.1 0.3 1 3 10 102 0.01 0.03 0 0.1 0.3 1 3 10 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) 2 |
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